Datasheet4U Logo Datasheet4U.com

TMS4C2972 - 45760 BY 12-BIT FIELD MEMORY

General Description

TMS4C2972 245760 BY 12-BIT FIELD MEMORY SMGS671 OCTOBER 1997 DT PACKAGE ( TOP VIEW ) VSS1 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0 SWCK RSTW WE IE VDD1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 36 VSS2 35 Q11 34 Q10 33 Q9 32 Q8 31 Q7 30 Q6 29 Q5 28 Q4 27 Q3 26 Q2 25 Q1 24 Q0 23 SRCK 2

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TMS4116 16384-Bin Dynamic Random-Access Memory Texas Instruments Inc
TMS416409A 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES National Semiconductor
TMS417409A 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES National Semiconductor
TMS426409A 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES National Semiconductor
TMS427409A 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES National Semiconductor

Other Datasheets by Texas Instruments

Part Number Description
TMS416100 DYNAMIC RANDOM-ACCESS MEMORIES
TMS416100P DYNAMIC RANDOM-ACCESS MEMORIES
TMS416160 1048576-WORD BY 16-BIT HIGH-SPEED DRAMS
TMS416160P 1048576-WORD BY 16-BIT HIGH-SPEED DRAMS
TMS416169 1048576-WORD BY 16-BIT EXTENDED DATA OUT HIGH-SPEED DRAMS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
D 2949120 Bits of Memory D Organization: 245 760 Words × 12 Bits D Single 5-V Power Supply (± 10% Tolerance) D Upwardly and Pin-to-Pin Compatible With TMS4C2970 and TMS4C2971 D 2-Port Memory With FIFO Operation – Full-Word Continuous Read / Write – Asynchronous Read / Write D Optional Random-Block Access Function (40 Words per Block) Enabled During Reset Operation, Two Modes for Write Access: D0- or IE-Controlled D Fully Static (Refresh-Free and Infinite Length of Clocking Pauses) D Write-Mask Function by Input Enable (IE) D Cascade Connection Capability D High-Speed Read / Write Operation ACCESS CYCLE TIME TIME READ WRITE (MAX) (MIN) (MIN) TMS4C2972-24 19 ns 24 ns 24 ns TMS4C2972-26 21 ns TMS4C2972-28 23 ns 26 ns 28 ns 26 ns 28 ns D 16M-Bit CMOS DRAM Process Technology D High-Rel