* integrated high-current zener diodes (ZCXa and ZCXb) to prevent gate damage in the event that an overstress condition OUTPUT3 11 OUTPUT3 12 14 DRAIN3 13 GATE3 occurs. These zener diodes also provide up to 4000 V of ESD protection when tested using the human-body model of a 100-pF capacitor in se
TPIC1301 Datasheet (256.90 KB)
TPIC1301
256.90 KB
3-half h-bridge gate-protected power dmos array.
ą TPIC1301 3ĆHALF HĆBRIDGE GATEĆPROTECTED POWER DMOS ARRAY SLIS037 NOVEMBER 1994 Low rDS(on) . . . 0.23 Ω Typ High Volt.
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