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TPIC1310 - 3-Half H-Bridge Gate-Protected Power DMOS Array

General Description

The TPIC1310 is a monolithic gate-protected power DMOS array that consists of six electrically isolated N-channel enhancement-mode DMOS transistors configured as a three-half H-bridge.

When suitably heat sunk, the TPIC1310 can drive motors requiring 2.5 A of phase current.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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D Configured for 3-Phase Brushless Motor Drive D Low rDS(on) . . . 0.25 Ω Typ D High Voltage Output . . . 30 V D Pulsed Current . . . 12 A Per Channel D Input Transient and ESD Protection D Compatible With High-Side and Low-Side Current Sense Resistors description The TPIC1310 is a monolithic gate-protected power DMOS array that consists of six electrically isolated N-channel enhancement-mode DMOS transistors configured as a three-half H-bridge. When suitably heat sunk, the TPIC1310 can drive motors requiring 2.5 A of phase current. The DMOS transistors are immune to second breakdown effects and current crowding, problems often associated with bipolar transistors.