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TPS7H2201-SEP Datasheet Efuse

Manufacturer: Texas Instruments

Overview: TPS7H2201-SP, TPS7H2201-SEP SLVSDO0C – SEPTEMBER 2018 – REVISED JUNE 2023 TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The TPS7H2201 is a single channel eFuse that provides configurable rise time to minimize inrush current and reverse current protection.

The device contains a P-channel MOSFET that can operate over an input voltage range of 1.5 V to 7 V and can support a maximum continuous current of 6 A.

The switch is controlled by an on and off input (EN), which is capable of interfacing directly with low-voltage control signals.

Key Features

  • Standard micro circuit available, SMD 5962R17220.
  • Vendor item drawing available, VID V62/23608.
  • Radiation performance:.
  • Radiation hardness assurance (RHA) up to TID 100 krad(Si).
  • Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) immune to LET = 75 MeV-cm2/mg.
  • SEFI/SET characterized to LET = 75 MeV-cm2/mg.
  • Integrated single channel eFuse.
  • Input voltage range: 1.5 V to 7 V.

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