TPS7H2201-SP Datasheet | Texas Instruments

Features - Standard micro circuit available, SMD 5962R17220 - Vendor item drawing available, VID V62/23608 - Radiation performance: - Radiation hardness assurance (RHA) up to TID 100 krad(Si) - Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) immune to LET = 75 Me V-cm2/mg - SEFI/SET characterized to LET = 75 Me V-cm2/mg - Integrated single channel e Fuse - Input voltage range: 1.5 V to 7 V - Low on-resistance (RON) of : - 35-mΩ maximum at 25°C and VIN = 5 V for CFP and KGD - 21.8-mΩ maximum at 25°C and VIN = 5 V for HTSSOP - 6-A maximum continuous switch current - Low control input threshold enables use of 1.2-, 1.8-, 2.5-, and 3.3-V logic - Configurable rise time (soft start) - Reverse current protection - Programmable and internal current limiting (fast-trip) - Programmable fault timer (current limit and retry modes) - Thermal shutdown - Ceramic and plastic package with thermal pad 2 Applications - Space satellite power management and distribution - Radiation hardened and tolerant power tree applications - Available in military (- 55°C to 125°C) temperature range 3 Description The TPS7H2201 is a single channel e Fuse that provides configurable rise time to minimize inrush current and reverse current protection. The device contains a P-channel MOSFET that can operate over an input voltage range of 1.5 V to 7 V and can support a maximum continuous current of 6 A. The switch is controlled by an on and off input (EN), which is capable of interfacing directly with low-voltage control signals. The TPS7H2201 is available in a ceramic and plastic package with integrated thermal pad allowing for high power dissipation. The device is characterized for operation over the free-air temperature range of - 55°C to 125°C. Device Information PART NUMBER(1) GRADE PACKAGE 5962R1722001VXC 5962-1722001VXC TPS7H2201HKR/EM Flight grade RHA 100 krad(Si) Flight grade QMLV Engineering samples(2) 16-Pin CDFP 11.00 × 9.60 mm Weight: 1.56...