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TPS7H2201-SEP - eFuse

Download the TPS7H2201-SEP datasheet PDF. This datasheet also covers the TPS7H2201-SP variant, as both devices belong to the same efuse family and are provided as variant models within a single manufacturer datasheet.

General Description

The TPS7H2201 is a single channel eFuse that provides configurable rise time to minimize inrush current and reverse current protection.

The device contains a P-channel MOSFET that can operate over an input voltage range of 1.5 V to 7 V and can support a maximum continuous current of 6 A.

Key Features

  • Standard micro circuit available, SMD 5962R17220.
  • Vendor item drawing available, VID V62/23608.
  • Radiation performance:.
  • Radiation hardness assurance (RHA) up to TID 100 krad(Si).
  • Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) immune to LET = 75 MeV-cm2/mg.
  • SEFI/SET characterized to LET = 75 MeV-cm2/mg.
  • Integrated single channel eFuse.
  • Input voltage range: 1.5 V to 7 V.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TPS7H2201-SP-etcTI.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Texas Instruments

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TPS7H2201-SP eFuse
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TPS7H3301-SP 3-A DDR Termination Regulator
TPS7H4001-SP 18-A Synchronous Buck Converter

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TPS7H2201-SP, TPS7H2201-SEP SLVSDO0C – SEPTEMBER 2018 – REVISED JUNE 2023 TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5-V to 7-V, 6-A eFuse 1 Features • Standard micro circuit available, SMD 5962R17220 • Vendor item drawing available, VID V62/23608 • Radiation performance: – Radiation hardness assurance (RHA) up to TID 100 krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) immune to LET = 75 MeV-cm2/mg – SEFI/SET characterized to LET = 75 MeV-cm2/mg • Integrated single channel eFuse • Input voltage range: 1.5 V to 7 V • Low on-resistance (RON) of : – 35-mΩ maximum at 25°C and VIN = 5 V for CFP and KGD – 21.