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BSM200GB120DLC Datasheet Preview

BSM200GB120DLC Datasheet

IGBT Module

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Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM200GB120DLC
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
TC = 80 °C
TC = 25 °C
tP = 1 ms, TC = 80°C
vorläufige Daten
preliminary data
VCES
IC,nom.
IC
ICRM
1200
200
420
400
V
A
A
A
Gesamt-Verlustleistung
total power dissipation
TC=25°C, Transistor
Ptot 1,3 kW
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
VGES
IF
+/- 20V
200
V
A
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
I2t - value, Diode
Isolations-Prüfspannung
insulation test voltage
tP = 1 ms
VR = 0V, tp = 10ms, TVj = 125°C
RMS, f = 50 Hz, t = 1 min.
IFRM
I2t
VISOL
400 A
- kA2s
2,5 kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
IC = 200A, VGE = 15V, Tvj = 25°C
IC = 200A, VGE = 15V, Tvj = 125°C
IC = 8mA, VCE = VGE, Tvj = 25°C
Gateladung
gate charge
VGE = -15V...+15V
Eingangskapazität
input capacitance
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
VCE = 1200V, V GE = 0V, Tvj = 25°C
VCE = 1200V, V GE = 0V, Tvj = 125°C
VCE = 0V, VGE = 20V, Tvj = 25°C
prepared by: Mark Münzer
approved by: Jens Thurau
date of publication: 02.12.1998
revision: 1a
VCE sat
min.
-
-
typ.
2,1
2,4
max.
2,6
V
V
VGE(th)
4,5
5,5
6,5
V
QG - - - µC
Cies - 13 - nF
Cres
-
-
- nF
ICES - 0,02 0,5 mA
- 0,5
mA
IGES
-
- 400 nA
1(8)
DB_BSM200GB120DLC.xls




eupec

BSM200GB120DLC Datasheet Preview

BSM200GB120DLC Datasheet

IGBT Module

No Preview Available !

Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM200GB120DLC
Charakteristische Werte / Characteristic values
Transistor / Transistor
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
Modulinduktivität
stray inductance module
IC = 200A, VCE = 600V
VGE = ±15V, RG = 4,7, Tvj = 25°C
VGE = ±15V, RG = 4,7, Tvj = 125°C
IC = 200A, VCE = 600V
VGE = ±15V, RG = 4,7, Tvj = 25°C
VGE = ±15V, RG = 4,7, Tvj = 125°C
IC = 200A, VCE = 600V
VGE = ±15V, RG = 4,7, Tvj = 25°C
VGE = ±15V, RG = 4,7, Tvj = 125°C
IC = 200A, VCE = 600V
VGE = ±15V, RG = 4,7, Tvj = 25°C
VGE = ±15V, RG = 4,7, Tvj = 125°C
IC = 200A, VCE = 600V, VGE = 15V
RG = 4,7, Tvj = 125°C, LS = 60nH
IC = 200A, VCE = 600V, VGE = 15V
RG = 4,7, Tvj = 125°C, LS = 60nH
tP 10µsec, VGE 15V, RG = 4,7
TVj125°C, VCC=900V, VCEmax=VCES -LsCE ·dI/dt
vorläufige Daten
preliminary data
min. typ. max.
td,on
- 0,05 -
µs
- 0,06 -
µs
tr
- 0,05 -
µs
- 0,07 -
µs
td,off
- 0,57 -
µs
- 0,57 -
µs
tf
- 0,04 -
µs
- 0,05 -
µs
Eon - 22 - mWs
Eoff - 23 - mWs
ISC
LsCE
- 1250 -
- 25 -
A
nH
Modul Leitungswiderstand, Anschlüsse – Chip
module lead resistance, terminals – chip
TC=25°C
RCC‘+EE‘
-
0,60
-
m
Charakteristische Werte / Characteristic values
Diode / Diode
Durchlaßspannung
forward voltage
IF = 200A, VGE = 0V, Tvj = 25°C
IF = 200A, VGE = 0V, Tvj = 125°C
Rückstromspitze
peak reverse recovery current
IF = 200A, - diF/dt = 4000A/µsec
VR = 600V, VGE = -15V, T vj = 25°C
VR = 600V, VGE = -15V, T vj = 125°C
Sperrverzögerungsladung
recovered charge
IF = 200A, - diF/dt = 4000A/µsec
VR = 600V, VGE = -15V, T vj = 25°C
VR = 600V, VGE = -15V, T vj = 125°C
Abschaltenergie pro Puls
reverse recovery energy
IF = 200A, - diF/dt = 4000A/µsec
VR = 600V, VGE = -15V, T vj = 25°C
VR = 600V, VGE = -15V, T vj = 125°C
min. typ. max.
VF
-
1,8 2,3
V
- 1,7
V
IRM - 240 - A
- 300 -
A
Qr - 23 - µAs
- 42 - µAs
Erec
-
6
- mWs
- 14 - mWs
2(8)
DB_BSM200GB120DLC.xls


Part Number BSM200GB120DLC
Description IGBT Module
Maker eupec
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BSM200GB120DLC Datasheet PDF





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