Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM200GB120DLC
Charakteristische Werte / Characteristic values
Transistor / Transistor
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
Modulinduktivität
stray inductance module
IC = 200A, VCE = 600V
VGE = ±15V, RG = 4,7Ω, Tvj = 25°C
VGE = ±15V, RG = 4,7Ω, Tvj = 125°C
IC = 200A, VCE = 600V
VGE = ±15V, RG = 4,7Ω, Tvj = 25°C
VGE = ±15V, RG = 4,7Ω, Tvj = 125°C
IC = 200A, VCE = 600V
VGE = ±15V, RG = 4,7Ω, Tvj = 25°C
VGE = ±15V, RG = 4,7Ω, Tvj = 125°C
IC = 200A, VCE = 600V
VGE = ±15V, RG = 4,7Ω, Tvj = 25°C
VGE = ±15V, RG = 4,7Ω, Tvj = 125°C
IC = 200A, VCE = 600V, VGE = 15V
RG = 4,7Ω, Tvj = 125°C, LS = 60nH
IC = 200A, VCE = 600V, VGE = 15V
RG = 4,7Ω, Tvj = 125°C, LS = 60nH
tP ≤ 10µsec, VGE ≤ 15V, RG = 4,7Ω
TVj≤125°C, VCC=900V, VCEmax=VCES -LsCE ·dI/dt
vorläufige Daten
preliminary data
min. typ. max.
td,on
- 0,05 -
µs
- 0,06 -
µs
tr
- 0,05 -
µs
- 0,07 -
µs
td,off
- 0,57 -
µs
- 0,57 -
µs
tf
- 0,04 -
µs
- 0,05 -
µs
Eon - 22 - mWs
Eoff - 23 - mWs
ISC
LsCE
- 1250 -
- 25 -
A
nH
Modul Leitungswiderstand, Anschlüsse – Chip
module lead resistance, terminals – chip
TC=25°C
RCC‘+EE‘
-
0,60
-
mΩ
Charakteristische Werte / Characteristic values
Diode / Diode
Durchlaßspannung
forward voltage
IF = 200A, VGE = 0V, Tvj = 25°C
IF = 200A, VGE = 0V, Tvj = 125°C
Rückstromspitze
peak reverse recovery current
IF = 200A, - diF/dt = 4000A/µsec
VR = 600V, VGE = -15V, T vj = 25°C
VR = 600V, VGE = -15V, T vj = 125°C
Sperrverzögerungsladung
recovered charge
IF = 200A, - diF/dt = 4000A/µsec
VR = 600V, VGE = -15V, T vj = 25°C
VR = 600V, VGE = -15V, T vj = 125°C
Abschaltenergie pro Puls
reverse recovery energy
IF = 200A, - diF/dt = 4000A/µsec
VR = 600V, VGE = -15V, T vj = 25°C
VR = 600V, VGE = -15V, T vj = 125°C
min. typ. max.
VF
-
1,8 2,3
V
- 1,7
V
IRM - 240 - A
- 300 -
A
Qr - 23 - µAs
- 42 - µAs
Erec
-
6
- mWs
- 14 - mWs
2(8)
DB_BSM200GB120DLC.xls
