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MT4953 - Dual P-Channel High Density Trench MOSFET

Description

The MT4953 uses advanced technology to provide excellent Rds(on), low switching loss and reasonable price.

This high density process is especially tailored to minimize on-state resistance.

Features

  • -30V/-4.9A, RDS(ON) = 65mΩ @ VGS = -10V -30V/-3.6A, RDS(ON) = 105mΩ @ VGS = -4.5V Super high dense cell trench design for low RDS(ON) Rugged and reliable SOP-8 package design ‹ ¾ ¾ ¾ ¾.

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Datasheet Details

Part number MT4953
Manufacturer matrix microtech
File Size 344.15 KB
Description Dual P-Channel High Density Trench MOSFET
Datasheet download datasheet MT4953 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr MT4953 Dual P-Channel High Density Trench MOSFET ‹ DESCRIPTION The MT4953 uses advanced technology to provide excellent Rds(on), low switching loss and reasonable price. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. ‹ ¾ ¾ ¾ ¾ ¾ FEATURES -30V/-4.9A, RDS(ON) = 65mΩ @ VGS = -10V -30V/-3.6A, RDS(ON) = 105mΩ @ VGS = -4.
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