Datasheet Details
| Part number | 2N60 |
|---|---|
| Manufacturer | Nell Power Semiconductor |
| File Size | 366.57 KB |
| Description | N-Channel Power MOSFET |
| Datasheet |
 2N60 Datasheet
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General Description
The Nell 2N60 is a three-terminal silicon device with current conduction capability of 2A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max.
threshold voltage of 4 volts.
Key Features
- RDS(ON) = 5.0Ω@VGS = 10V Ultra low gate charge(11nC max. ) Low reverse transfer capacitance (CRSS = 5pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-251 (I-PAK) (2N60F) D D G S TO-252 (D-PAK) (2N60G) GDS TO-220AB (2N60A) GDS TO-220F (2N60AF).
