2N60
DESCRIPTION
The Nell 2N60 is a three-terminal silicon device with current conduction capability of 2A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts.
They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications.
FEATURES
RDS(ON) = 5.0Ω@VGS = 10V Ultra low gate charge(11n C max.) Low reverse transfer capacitance (CRSS = 5p F typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature
GDS TO-251 (I-PAK) (2N60F)
TO-252 (D-PAK) (2N60G)
TO-220AB (2N60A)
TO-220F (2N60AF)
PRODUCT SUMMARY
ID (A) VDSS (V) RDS(ON) (Ω) QG(n C) max.
2 600 5.0 @ VGS = 10V 11
D (Drain)
G (Gate)
S (Source)
.nellsemi.
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