Nell Power Semiconductor 2N60A
2N60 is a three-terminal silicon device with current conduction capability of 2A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications.
| Part No. |
2N60A |
| Datasheet |
2N60A
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| Manufacturer |
 Nell Power Semiconductor |
| Description |
N-Channel Power MOSFET |
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DESCRIPTION
The Nell threshold voltage of 4 volts. FEATURES
RDS(ON) = 5.0Ω@VGS = 10V Ultra low gate charge(11nC max.) Low reverse transfer capacitance (CRSS = 5pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D G D S TO-251 (I-PAK) (2N60F) D D G S TO-252 (D-PAK) (2N60G) G DS TO-220AB (2N60A) GDS TO-220F (2N60AF) PRODUCT SUMMARY ID (A) VDSS (V) RDS(ON) (Ω) QG(nC) max. 2 600 5.0 @ VGS = 10V 11 D (Drain) G (Gate) S (Source) Page 1 of 8 SEMICONDUCTOR 2N60 Series RRooHHSS Nell High Power Products ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise specified) SYMBOL PARAMETER TEST CONDITIONS VDSS VDGR Drain to Source voltage Drain to Gate voltage TJ=25°C to 150°C RGS=20KΩ VGS Gate to Source voltage ID Continous Drain Current TC=25°C TC=100°C IDM Pulsed Drain current(Note 1) IAR Avalanche current(Note 1) EAR Repetitive avalanche energy(Note 1) IAR=2A, RGS=50Ω, VGS=10V EAS Single pulse avalanche energy (Note 2) IAS=2A,...
