This page provides the datasheet information for the 2N60G, a member of the 2N60 N-Channel Power MOSFET family.
Description
The Nell 2N60 is a three-terminal silicon device with current conduction capability of 2A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max.
threshold voltage of 4 volts.
Features
- RDS(ON) = 5.0Ω@VGS = 10V Ultra low gate charge(11nC max. ) Low reverse transfer capacitance (CRSS = 5pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature
D
G D S TO-251 (I-PAK) (2N60F)
D
D
G S
TO-252 (D-PAK) (2N60G)
G DS
TO-220AB (2N60A)
GDS
TO-220F (2N60AF).