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TIP35A Key Features

  • Emitter Saturation Voltage: VCE(sat) = 1.8Vdc (MAX.) @ IC = 15A
  • Emitter Saturation Voltage: VCEO(sus) = 40Vdc (Min.)
  • TIP35,TIP36
  • TIP35A,TIP36A = 80Vdc (Min.)
  • TIP35B, TIP36B = 100Vdc (Min.)
  • TIP35C, TIP36C DC Current Gain hFE = 25 (Min.) @ Ic = 1.5A High Current Gain
  • Bandwidth product fT = 3.0 MHz (Min.) @ Ic=1.0A

Other TIP35A Manufacturers

Manufacturer Part Number Description
BOURNS Logo Bourns TIP35A NPN SILICON POWER TRANSISTORS
Motorola Logo Motorola Semiconductor TIP35A COMPLEMENTARY SILICON POWER TRANSISTORS
ON Semiconductor Logo onsemi TIP35A Complementary Silicon High-Power Transistors
NTE Logo NTE Electronics TIP35A Silicon NPN Transistor
SavantIC Logo SavantIC TIP35A SILICON POWER TRANSISTOR

View all TIP35A datasheets →

TIP35A Description

SEMICONDUCTOR TIP35 (NPN) Series TIP36 (PNP) Series RRooHHSS Nell High Power Products plementary Silicon Power Transistor 25A/40~100V/125W 15.6±0.4 9.6 4.8±0.2 2.0±0.1 1.8 5.0±0.2 19.9±0.3 4.0 2.0 Φ3.2±0,1.