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TIP36A Datasheet Preview

TIP36A Datasheet

Complementary Silicon Power Transistor

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SEMICONDUCTOR
TIP35 (NPN) Series
TIP36 (PNP) Series RRooHHSS
Nell High Power Products
Complementary Silicon Power Transistor
25A/40~100V/125W
15.6±0.4
9.6
4.8±0.2
2.0±0.1
Φ3.2±0,1
TO-3P(B)
FEATURES
Complementary NPN-PNP transistors
Low collector-emitter saturation voltage
Satisfactory linearity of foward current
transfer ratio hFE
TO-3P package which can be installed
to the heat sink with one screw
Collector - Emitter Saturation Voltage:
VCE(sat) = 1.8Vdc (MAX.) @ IC = 15A
Collector - Emitter Saturation Voltage:
VCEO(sus) = 40Vdc (Min.) - TIP35,TIP36
= 60Vdc (Min.) - TIP35A,TIP36A
= 80Vdc (Min.) - TIP35B, TIP36B
= 100Vdc (Min.) - TIP35C, TIP36C
DC Current Gain hFE = 25 (Min.) @ Ic = 1.5A
High Current Gain - Bandwidth product
fT = 3.0 MHz (Min.) @ Ic=1.0A
APPLICATIONS
Audio amplifier
General purpose switching and amplifier
2
3
1.05
+0.2
-0.1
5.45±0.1
5.45±0.1
BCE
0.65
+0.2
-0.1
1.4
12 3
All dimensions in millimeters
CC
BB
E
TIP35(NPN)
E
TIP36(PNP)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C)
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IB
PC
Tj
Tstg
Collector to base voltage (IE = 0)
Collector to emitter voltage (IB = 0)
Emitter to base voltage (IC = 0)
Collector current
Collector peak current (tp < 0.3mS)
Base current
Collector power dissipation
(Derate above 25°C)
Junction temperature
Storage temperature
@TC = 25°C
@TA = 25°C
TIP35
TIP36
40
VALUE
TIP35A TIP35B TIP35C
TIP36A TIP36B TIP36C
60 80 100
UNIT
40 60 80 100 V
5
25
40 A
5
125 (1.0)
3.5 (0.028)
W(W/°C)
150
-65 to 150
ºC
E Unclamped inductive load energy (Note 1)
Note: 1. This rating is based on the capability of the transistor to operate safely is a circuit of:
L = 20mH, IB(on) = 0.4A, RBE = 100Ω, VBE(off) = 0, RS = 0.1Ω, VCC = 20V
www.nellsemi.com
Page 1 of 3
90
mJ




nELL

TIP36A Datasheet Preview

TIP36A Datasheet

Complementary Silicon Power Transistor

No Preview Available !

SEMICONDUCTOR
TIP35 (NPN) Series
TIP36 (PNP) Series RRooHHSS
Nell High Power Products
THERMAL CHARACTERISTICS (TC = 25°C)
SYMBOL
PARAMETER
Rth(j-c)
Maximum thermal resistance, junction to case
Rth(j-a)
Maximum thermal resistance, junction to ambient
VALUE
1.0
36.0
UNIT
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
Off Characteristics
TIP35,TIP36
VCEO(SUS) Collector to emitter sustaining voltage (Note 1) lC = 30mA, IB=0
TIP35A,TIP36A
TIP35B,TIP36B
ICEO
Collector cutoff current
VCE = 30V, IB = 0
VCE = 60V, lB = 0
TIP35C,TIP36C
TIP35,TIP36
TIP35A,TIP36A
TIP35B,TIP36B
TIP35C,TIP36C
IEBO Emitter cutoff current
VEB = 5V, IC = 0
ICES
Collector cutoff current
On Characteristics
VCE = 40V, VEB = 0 TIP35,TIP36
VCE = 60V, VEB = 0 TIP35A,TIP36A
VCE = 80V, VEB = 0 TIP35B,TIP36B
VCE = 100V, VEB = 0 TIP35C,TIP36C
hFE Forward current transfer ratio (DC current gain)
VCE(sat) Collector to emitter saturation voltage (Note1)
VBE(sat)
VBE(on)
Base to emitter saturation voltage (Note1)
Base to emitter voltage (Note1)
Dynamic Characteristics
VCE = 4V, IC = 1.5A
VCE = 4V, IC = 15A
lC = 15A, lB = 1.5A
lC = 25A, lB = 5A
lC = 15A, lB = 1.5A
lC = 15A, VCE = 4V
lC = 25A, VCE = 4V
fT Current gain - Bandwidth product (note 2)
hfe Small signal current gain
lC = 1.0A, VCE = 10V, ftest = 1MHz
lC = 1.0A, VCE = 10V, f = 1KHz
Note 1. Pulsed : Pulse duration 300 µS, duty cycle ≤ 2.0%.
Note 2. fT = |hfe| • fTEST
Note 3. For PNP type voltage and current are negative.
MIN
40
60
80
100
25
15
3.0
20
MAX
1.0
1.0
0.7
0.7
0.7
0.7
75
1.8
4.0
2.5
2.0
4.0
V
mA
mA
V
MHZ
www.nellsemi.com
Page 2 of 3


Part Number TIP36A
Description Complementary Silicon Power Transistor
Maker nELL
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TIP36A Datasheet PDF






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