Datasheet4U Logo Datasheet4U.com

TIP35C - Complementary Silicon Power Transistor

Download the TIP35C datasheet PDF. This datasheet also covers the TIP35 variant, as both devices belong to the same complementary silicon power transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Complementary NPN-PNP transistors Low collector-emitter saturation voltage Satisfactory linearity of foward current transfer ratio hFE TO-3P package which can be installed to the heat sink with one screw Collector - Emitter Saturation Voltage: VCE(sat) = 1.8Vdc (MAX. ) @ IC = 15A Collector - Emitter Saturation Voltage: VCEO(sus) = 40Vdc (Min. ) - TIP35,TIP36 = 60Vdc (Min. ) - TIP35A,TIP36A = 80Vdc (Min. ) - TIP35B, TIP36B = 100Vdc (Min. ) - TIP35C, TIP36C DC Current Gain hFE = 25 (Min. ) @ Ic = 1.5A H.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TIP35-nELL.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
TIP35C NPN SILICON POWER TRANSISTORS BOURNS
TIP35C Complementary power transistors STMicroelectronics
TIP35C Silicon NPN transistor BLUE ROCKET ELECTRONICS
TIP35C COMPLEMENTARY SILICON POWER TRANSISTORS Motorola
TIP35C Complementary Silicon High-Power Transistors ON Semiconductor

Other Datasheets by Nell Power Semiconductor

Part Number Description
TIP35 Complementary Silicon Power Transistor
TIP35A Complementary Silicon Power Transistor
TIP35B Complementary Silicon Power Transistor
TIP31 Complementary Silicon Power Transistor
TIP31A Complementary Silicon Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMICONDUCTOR TIP35 (NPN) Series TIP36 (PNP) Series RRooHHSS Nell High Power Products Complementary Silicon Power Transistor 25A/40~100V/125W 15.6±0.4 9.6 4.8±0.2 2.0±0.1 1.8 5.0±0.2 19.9±0.3 4.0 2.0 Φ3.2±0,1 TO-3P(B) FEATURES Complementary NPN-PNP transistors Low collector-emitter saturation voltage Satisfactory linearity of foward current transfer ratio hFE TO-3P package which can be installed to the heat sink with one screw Collector - Emitter Saturation Voltage: VCE(sat) = 1.8Vdc (MAX.) @ IC = 15A Collector - Emitter Saturation Voltage: VCEO(sus) = 40Vdc (Min.) - TIP35,TIP36 = 60Vdc (Min.) - TIP35A,TIP36A = 80Vdc (Min.) - TIP35B, TIP36B = 100Vdc (Min.) - TIP35C, TIP36C DC Current Gain hFE = 25 (Min.) @ Ic = 1.5A High Current Gain - Bandwidth product fT = 3.0 MHz (Min.) @ Ic=1.