TIP35C Datasheet and Specifications PDF

The TIP35C is a Complementary Power Transistors.

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Part NumberTIP35C Datasheet
ManufacturerMulticomp
Overview TIP35C, 36C Complementary Power Transistors Designed for use in general purpose power amplifier and switching applications. Features: • Collector-Emitter Sustaining Voltage VCEO(sus) = 100V (Minimum) .
* Collector-Emitter Sustaining Voltage VCEO(sus) = 100V (Minimum) - TIP35C, TIP36C
* DC Current Gain hFE = 25 (Minimum) at IC = 1.5A.
* Current Gain-Bandwidth Product fT = 3.0MHz (Minimum) at IC = 1.0A. Pin 1. Base 2. Collector 3. Emitter Maximum Ratings Dimensions A B C D E F G H I J K L M N O P.
Part NumberTIP35C Datasheet
DescriptionComplementary Silicon Power Transistor
ManufacturerNell Power Semiconductor
Overview SEMICONDUCTOR TIP35 (NPN) Series TIP36 (PNP) Series RRooHHSS Nell High Power Products Complementary Silicon Power Transistor 25A/40~100V/125W 15.6±0.4 9.6 4.8±0.2 2.0±0.1 1.8 5.0±0.2 19.9±0.3 4.0. Complementary NPN-PNP transistors Low collector-emitter saturation voltage Satisfactory linearity of foward current transfer ratio hFE TO-3P package which can be installed to the heat sink with one screw Collector - Emitter Saturation Voltage: VCE(sat) = 1.8Vdc (MAX.) @ IC = 15A Collector - Emitter .
Part NumberTIP35C Datasheet
DescriptionComplementary Silicon Power Transistors
ManufacturerCentral Semiconductor
Overview The CENTRAL SEMICONDUCTOR TIP35 and TIP36 series devices are complementary silicon power transistors manufactured by the epitaxial base process, designed for high current amplifier and switching appl. .
Part NumberTIP35C Datasheet
DescriptionComplementary power transistors
ManufacturerSTMicroelectronics
Overview The devices are manufactured in planar technology with “base island” layout. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. . 3 2 1 TO-247 .
* Low collector-emitter saturation voltage
* Complementary NPN - PNP transistors Applications
* General purpose
* Audio amplifier Description The devices are manufactured in planar technology with “base island” layout. The resulting transistors show exceptional high gain performance coupled with ver.