Part TIP35B
Description Complementary Silicon Power Transistor
Category Transistor
Manufacturer Nell Power Semiconductor
Size 216.82 KB
Nell Power Semiconductor

TIP35B Overview

Key Features

  • Emitter Saturation Voltage: VCE(sat) = 1.8Vdc (MAX.) @ IC = 15A Collector
  • Emitter Saturation Voltage: VCEO(sus) = 40Vdc (Min.)
  • TIP35,TIP36 = 60Vdc (Min.)
  • TIP35A,TIP36A = 80Vdc (Min.)
  • TIP35B, TIP36B = 100Vdc (Min.)
  • TIP35C, TIP36C DC Current Gain hFE = 25 (Min.) @ Ic = 1.5A High Current Gain
  • Bandwidth product fT = 3.0 MHz (Min.) @ Ic=1.0A