| Part Number | TIP35B Datasheet |
|---|---|
| Manufacturer | Nell Power Semiconductor |
| Overview | SEMICONDUCTOR TIP35 (NPN) Series TIP36 (PNP) Series RRooHHSS Nell High Power Products Complementary Silicon Power Transistor 25A/40~100V/125W 15.6±0.4 9.6 4.8±0.2 2.0±0.1 1.8 5.0±0.2 19.9±0.3 4.0. Complementary NPN-PNP transistors Low collector-emitter saturation voltage Satisfactory linearity of foward current transfer ratio hFE TO-3P package which can be installed to the heat sink with one screw Collector - Emitter Saturation Voltage: VCE(sat) = 1.8Vdc (MAX.) @ IC = 15A Collector - Emitter . |
TIP35B Datasheet and Specifications PDF
The TIP35B is a Complementary Silicon Power Transistor.
| Part Number | TIP35B Datasheet |
|---|---|
| Description | Complementary Silicon Power Transistors |
| Manufacturer | Central Semiconductor |
| Overview | The CENTRAL SEMICONDUCTOR TIP35 and TIP36 series devices are complementary silicon power transistors manufactured by the epitaxial base process, designed for high current amplifier and switching appl. . |
| Part Number | TIP35B Datasheet |
|---|---|
| Description | Silicon NPN Transistor |
| Manufacturer | NTE Electronics |
| Overview |
TIP35A, TIP35B, TIP35C Silicon NPN Transistors
Power Amp, Switch TO−247 Type Package
Features: D 25A Collector Current D Low Leakage Current: ICEO = 1mA @ 30V and 60V D Excellent DC Gain: hFE = 40 (T.
D 25A Collector Current D Low Leakage Current: ICEO = 1mA @ 30V and 60V D Excellent DC Gain: hFE = 40 (Typ) @ IC = 15A D High Current Gain Bandwidth Product: |hfe| = 3 (Min) @ IC = 1A, f = 1MHz
Absolute Maximum Ratings: Collector *Base Voltage, VCB TIP35A . . . . . . . . . . . . . . . . . . . . . . . |
| Part Number | TIP35B Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·DC Current Gain- : hFE= 25(Min)@IC = 1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) ·Complement to Type TIP36B ·Current Gain-Bandwidth Product- : fT= 3.0MHz(Min)@IC= 1.0A ·100% ava. s registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 15A; IB= 1.5A VCE(sat)-2 Collect. |