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TIP35 - Complementary Silicon Power Transistor

Key Features

  • Complementary NPN-PNP transistors Low collector-emitter saturation voltage Satisfactory linearity of foward current transfer ratio hFE TO-3P package which can be installed to the heat sink with one screw Collector - Emitter Saturation Voltage: VCE(sat) = 1.8Vdc (MAX. ) @ IC = 15A Collector - Emitter Saturation Voltage: VCEO(sus) = 40Vdc (Min. ) - TIP35,TIP36 = 60Vdc (Min. ) - TIP35A,TIP36A = 80Vdc (Min. ) - TIP35B, TIP36B = 100Vdc (Min. ) - TIP35C, TIP36C DC Current Gain hFE = 25 (Min. ) @ Ic = 1.5A H.

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Other Datasheets by Nell Power Semiconductor

Part Number Description
TIP35A Complementary Silicon Power Transistor
TIP35B Complementary Silicon Power Transistor
TIP35C Complementary Silicon Power Transistor
TIP31 Complementary Silicon Power Transistor
TIP31A Complementary Silicon Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TIP35 (NPN) Series TIP36 (PNP) Series RRooHHSS Nell High Power Products Complementary Silicon Power Transistor 25A/40~100V/125W 15.6±0.4 9.6 4.8±0.2 2.0±0.1 1.8 5.0±0.2 19.9±0.3 4.0 2.0 Φ3.2±0,1 TO-3P(B) FEATURES Complementary NPN-PNP transistors Low collector-emitter saturation voltage Satisfactory linearity of foward current transfer ratio hFE TO-3P package which can be installed to the heat sink with one screw Collector - Emitter Saturation Voltage: VCE(sat) = 1.8Vdc (MAX.) @ IC = 15A Collector - Emitter Saturation Voltage: VCEO(sus) = 40Vdc (Min.) - TIP35,TIP36 = 60Vdc (Min.) - TIP35A,TIP36A = 80Vdc (Min.) - TIP35B, TIP36B = 100Vdc (Min.) - TIP35C, TIP36C DC Current Gain hFE = 25 (Min.) @ Ic = 1.5A High Current Gain - Bandwidth product fT = 3.0 MHz (Min.) @ Ic=1.