NP3400MR-S datasheet, mosfet equivalent, natlinear

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Features and benefits

* VDS =30V，ID =5.8A RDS(ON)(Typ.)=24mΩ @VGS=4.5V RDS(ON)(Typ.)=35mΩ @VGS=2.5V
* High power and current handing capability
* Lead free product is acquired
.

Application

D G General Features
* VDS =30V，ID =5.8A RDS(ON)(Typ.)=24mΩ @VGS=4.5V RDS(ON)(Typ.)=35mΩ @VGS=2.5V
* High pow.

Description

Schematic diagram The NP3400MR-S uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as a load switch or in PWM applications. D G .

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