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BAS416 Datasheet

Low-leakage diode

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BAS416
Low-leakage diode
2 October 2020
Product data sheet
1. General description
Epitaxial, medium-speed switching diode with a low leakage current encapsulated in a small
SOD323 SMD plastic package.
2. Features and benefits
Plastic SMD package
Low leakage current: typ. 3 pA
Switching time: typ. 0.8 us
Continuous reverse voltage: max. 75 V
Repetitive peak reverse voltage: max. 85 V
Repetitive peak forward current: max. 500 mA.
AEC-Q101 qualified
3. Applications
Low-leakage current applications in surface mounted circuits.
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
IF
VRRM
forward current
Tj = 25 °C
repetitive peak reverse
voltage
VF
forward voltage
IF = 50 mA; Tj = 25 °C
IR
reverse current
VR = 75 V; pulsed; Tj = 25 °C
trr
reverse recovery time IF = 10 mA; IR = 10 mA; RL = 100 Ω;
IR(meas) = 1 mA; Tj = 25 °C
Min Typ Max Unit
-
-
200 mA
-
-
85
V
-
-
1.1 V
-
0.003 5
nA
-
0.8 3
µs
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
K
cathode
2
A
anode
Simplified outline
1
2
SOD323
Graphic symbol
K
A
aaa-032142




nexperia

BAS416 Datasheet Preview

BAS416 Datasheet

Low-leakage diode

No Preview Available !

Nexperia
BAS416
Low-leakage diode
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BAS416
SOD323
Description
plastic, surface-mounted package; 2 leads; 1.3 mm pitch; 1.7
mm x 1.25 mm x 0.95 mm body
Version
SOD323
7. Marking
Table 4. Marking codes
Type number
BAS416
Marking code
D4
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
VRRM
repetitive peak reverse Tj = 25 °C
-
voltage
VR
reverse voltage
-
IF
forward current
-
IFSM
non-repetitive peak
tp = 1 µs; square wave; Tj(init) = 25 °C
-
forward current
tp = 1 ms; square wave; Tj(init) = 25 °C
-
tp = 1 s; square wave; Tj(init) = 25 °C
-
IFRM
repetitive peak forward
-
current
Ptot
Tj
Tamb
Tstg
total power dissipation
junction temperature
ambient temperature
storage temperature
Tamb ≤ 25 °C
[1]
-
-
-55
-65
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Max
85
75
200
4
1
0.5
500
250
150
150
150
Unit
V
V
mA
A
A
A
mA
mW
°C
°C
°C
BAS416
Product data sheet
All information provided in this document is subject to legal disclaimers.
2 October 2020
© Nexperia B.V. 2020. All rights reserved
2 / 10


Part Number BAS416
Description Low-leakage diode
Maker nexperia
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