• Part: BCV46-Q
  • Description: PNP Darlington transistor
  • Category: Transistor
  • Manufacturer: Nexperia
  • Size: 202.79 KB
Download BCV46-Q Datasheet PDF
Nexperia
BCV46-Q
description PNP Darlington transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN plement: BCV47-Q 2. Features and benefits - High current - High current gain - Qualified according to AEC-Q101 and remended for use in automotive applications 3. Applications - For general AF applications and where high amplification is required 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VCBO collector-base voltage open emitter VCES collector-emitter voltage base short-circuited to emitter IC collector current ICM peak collector current h FE DC current gain VCE = -5 V; IC = -100 m A; Tamb = 25 °C [1] [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02 Min Typ Max Unit - - -80 V - - -60 V - - - - - -500 m A -800 m A - 5. Pinning information Table 2. Pinning information Pin Symbol Description B base E emitter C collector Simplified...