N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Full PDF Text Transcription for BSS138BK (Reference)
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BSS138BK 60 V, 360 mA N-channel Trench MOSFET Rev. 1 — 4 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect...
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rofile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 1.5 kV AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1.
BSS138BK Datasheet
