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BSS138P - N-channel MOSFET

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

  • Logic-level compatible.
  • Very fast switching.
  • Trench MOSFET technology.
  • AEC-Q101 qualified 1.3.

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BSS138P 60 V, 360 mA N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits „ Logic-level compatible „ Very fast switching „ Trench MOSFET technology „ AEC-Q101 qualified 1.3 Applications „ Relay driver „ High-speed line driver „ Low-side loadswitch „ Switching circuits 1.4 Quick reference data Table 1.
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