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BUK662R5-30C Datasheet N-channel TrenchMOS intermediate level FET

Manufacturer: Nexperia

Datasheet Details

Part number BUK662R5-30C
Manufacturer Nexperia
File Size 924.68 KB
Description N-channel TrenchMOS intermediate level FET
Datasheet download datasheet BUK662R5-30C Datasheet

General Description

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.

1.2

Overview

BUK662R5-30C N-channel TrenchMOS intermediate level FET Rev.

2 — 14 October 2010 Product data sheet 1.

Product profile 1.

Key Features

  • AEC Q101 compliant.
  • Suitable for intermediate level gate drive sources.
  • Suitable for thermally demanding environments due to 175 °C rating 1.3.