BUK7908-40AIE fet equivalent, n-channel trenchplus standard level fet.
* Electrostatically robust due to integrated protection diodes
* Low conduction losses due to low on-state resistance
* Q101 compliant
* Reduced componen.
1.2 Features and benefits
* Electrostatically robust due to integrated protection diodes
* Low conduction loss.
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing and diodes for ElectroStatic Discharge (ESD) protection. This product has been des.
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