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MJD31CH-Q - 3A NPN high power bipolar transistor

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nexperia

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MJD31CH-Q 3A NPN high power bipolar transistor by nexperia - Datasheet Preview — Datasheet preview – MJD31CH-Q

Datasheet Details

Part number	MJD31CH-Q
Manufacturer	nexperia
File Size	220.09 KB
Description	3A NPN high power bipolar transistor
Datasheet	MJD31CH-Q Datasheet
Additional preview pages of the MJD31CH-Q datasheet.

Product details

Description

NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package.

Features

High thermal power dissipation capability.
High energy efficiency due to less heat generation.
High current gain at VCE = 60 V.
Electrically similar to popular MJD31 series.
Low collector emitter saturation voltage.
Fast switching speeds.
Qualified according to AEC-Q101 and recommended for use in automotive.

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Published: Dec 12, 2024 |