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MJD31CH-Q - 3A NPN high power bipolar transistor

General Description

NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package.

2.

Key Features

  • High thermal power dissipation capability.
  • High energy efficiency due to less heat generation.
  • High current gain at VCE = 60 V.
  • Electrically similar to popular MJD31 series.
  • Low collector emitter saturation voltage.
  • Fast switching speeds.
  • Qualified according to AEC-Q101 and recommended for use in automotive.

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Datasheet Details

Part number MJD31CH-Q
Manufacturer Nexperia
File Size 220.09 KB
Description 3A NPN high power bipolar transistor
Datasheet download datasheet MJD31CH-Q Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MJD31CH-Q 100 V, 3 A NPN high power bipolar transistor 18 May 2021 Product data sheet 1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • High current gain at VCE = 60 V • Electrically similar to popular MJD31 series • Low collector emitter saturation voltage • Fast switching speeds • Qualified according to AEC-Q101 and recommended for use in automotive applications 3. Applications • Power management • Load switch • Linear mode voltage regulator • Constant current drive backlighting application • Motor drive • Relay replacement 4. Quick reference data Table 1.