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MJD32C - 3A PNP high power bipolar transistor

Description

PNP high power bipolar transistor in a power SOT428 Surface-Mounted Device (SMD) plastic package.

2.

Features

  • High thermal power dissipation capability.
  • High energy efficiency due to less heat generation.
  • Electrically similar to popular MJD32 series.
  • Low collector emitter saturation voltage.
  • Fast switching speeds 3.

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Datasheet Details

Part number MJD32C
Manufacturer nexperia
File Size 218.25 KB
Description 3A PNP high power bipolar transistor
Datasheet download datasheet MJD32C Datasheet

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Full PDF Text Transcription

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MJD32C 100 V, 3 A PNP high power bipolar transistor 23 May 2019 Preliminary data sheet 1. General description PNP high power bipolar transistor in a power SOT428 Surface-Mounted Device (SMD) plastic package. NPN complement: MJD31C 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD32 series • Low collector emitter saturation voltage • Fast switching speeds 3. Applications • Power management • Load switch • Linear mode voltage regulator • Constant current drive backlighting application • Motor drive • Relay replacement 4. Quick reference data Table 1.
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