MJD32C Datasheet | Specifications & PDF Download

Features  BVCEO > -100V  IC = -3A high Continuous Collector Current  ICM = -5A Peak Pulse Current  Ideal for Power Switching or Amplification Appl

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MJD32/32C MJD32/32C General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • Load Formed for Surface Mount A

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NOT RECOMMENDED FOR NEW DESIGN USE MJD32CUQ Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Auto

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MJD32CT4-A Datasheet Automotive-grade low voltage PNP power transistor TAB 23 1 DPAK C(2, TAB) B(1) E(3) SC07710_TAB Features • AEC-Q101 qualified

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MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) Complementary Power Transistors DPAK For Su

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SMD Power Transistor (PNP) MJD32C SMD Power Transistor (PNP) Features • Designed for general purpose amplifier and low speed switching applications •

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MJD31 (NPN), MJD32 (PNP) Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed sw

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MJD32CA 100 V, 3 A PNP high power bipolar transistor 23 November 2020 Product data sheet 1. General description PNP high power bipolar transistor

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isc Silicon PNP Power Transistors INCHANGE Semiconductor MJD32C DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= -1A ·Collector-Emitter Breakdown Vo

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD31/D Complementary Power Transistors • • • • MJD31,C* PNP MJD32,C* *Motorola Prefe

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Epitaxial Planar PNP Transistor FEATURES z Low formed for surface mount Pb application. Lead-free z Electrically similar to popular and TIP32C.

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MJD32C 100 V, 3 A PNP high power bipolar transistor 23 May 2019 Preliminary data sheet 1. General description PNP high power bipolar transistor in

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MJD32CT4 Datasheet Low voltage PNP power transistor TAB 23 1 DPAK C(2, TAB) B(1) Features • Surface-mounting TO-252 power package in tape and reel •

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SMD Type Transistors Complementary Power Transistors MJD31,MJD31C(NPN) MJD32,MJD32C(PNP) Features Lead Formed for Surface Mount Applications in Pla

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Green MJD32CUQ 100V PNP MEDIUM POWER TRANSISTOR IN TO252 Features  BVCEO > -100V  IC = -3A High Continuous Collector Current  ICM = -5A Peak Pul

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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MJD32C Rev.E May.-2016 DATA SHEET / Descriptions TO-252 PNP 。Silicon PNP transistor in a TO-252 Plastic Package.  / Features ，。 Low Speed ,Lo

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DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS MJD32C TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use i

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Elektronische Bauelemente MJD32C -3A, -100V P P Epitaxial Silicon Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

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SEMICONDUCTOR TECHNICAL DATA MJD32C MJD32C TRANSISTOR (PNP) FEA TURES Designed for General Purpose Amplifier and Low Speed Switching Applications L

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