MJD32C Datasheet | Specifications & PDF Download

Features  BVCEO > -100V  IC = -3A high Continuous Collector Current  ICM = -5A Peak Pulse Current  Ideal for Power Switching or Amplification Appl

(28 views)

MJD32CT4 Datasheet Low voltage PNP power transistor TAB 23 1 DPAK C(2, TAB) B(1) Features • Surface-mounting TO-252 power package in tape and reel •

(15 views)

NOT RECOMMENDED FOR NEW DESIGN USE MJD32CUQ Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Auto

(14 views)

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company COMPLEMENTARY PLASTIC POWER TRANSISTORS MJD31, C NPN MJD32

(12 views)

Epitaxial Planar PNP Transistor FEATURES z Low formed for surface mount Pb application. Lead-free z Electrically similar to popular and TIP32C.

(12 views)

SEMICONDUCTOR TECHNICAL DATA MJD32C MJD32C TRANSISTOR (PNP) FEA TURES Designed for General Purpose Amplifier and Low Speed Switching Applications L

(12 views)

MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) Complementary Power Transistors DPAK For Su

(11 views)

Green MJD32CUQ 100V PNP MEDIUM POWER TRANSISTOR IN TO252 Features  BVCEO > -100V  IC = -3A High Continuous Collector Current  ICM = -5A Peak Pul

(10 views)

SMD Type Transistors Complementary Power Transistors MJD31,MJD31C(NPN) MJD32,MJD32C(PNP) Features Lead Formed for Surface Mount Applications in Pla

(10 views)

MJD32CA 100 V, 3 A PNP high power bipolar transistor 23 November 2020 Product data sheet 1. General description PNP high power bipolar transistor

(10 views)

MJD32CT4-A Datasheet Automotive-grade low voltage PNP power transistor TAB 23 1 DPAK C(2, TAB) B(1) E(3) SC07710_TAB Features • AEC-Q101 qualified

(10 views)

Elektronische Bauelemente MJD32C -3A, -100V P P Epitaxial Silicon Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

(10 views)

isc Silicon PNP Power Transistors INCHANGE Semiconductor MJD32C DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= -1A ·Collector-Emitter Breakdown Vo

(6 views)

MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

(6 views)

DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS MJD32C TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use i

(6 views)

SMD Power Transistor (PNP) MJD32C SMD Power Transistor (PNP) Features • Designed for general purpose amplifier and low speed switching applications •

(6 views)

MJD32C Rev.E May.-2016 DATA SHEET / Descriptions TO-252 PNP 。Silicon PNP transistor in a TO-252 Plastic Package.  / Features ，。 Low Speed ,Lo

(6 views)

MJD31 (NPN), MJD32 (PNP) Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed sw

(4 views)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD31/D Complementary Power Transistors • • • • MJD31,C* PNP MJD32,C* *Motorola Prefe

(4 views)

MJD32/32C MJD32/32C General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • Load Formed for Surface Mount A

(3 views)