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MJD32CQ - PNP Transistor

General Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.

Key Features

  • BVCEO > -100V.
  • IC = -3A high Continuous Collector Current.
  • ICM = -5A Peak Pulse Current.
  • Ideal for Power Switching or Amplification.

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Other Datasheets by Diodes Incorporated

Part Number Description
MJD32C PNP Transistor
MJD32CUQ 100V PNP MEDIUM POWER TRANSISTOR
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NOT RECOMMENDED FOR NEW DESIGN USE MJD32CUQ Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features  BVCEO > -100V  IC = -3A high Continuous Collector Current  ICM = -5A Peak Pulse Current  Ideal for Power Switching or Amplification Applications  Complementary NPN Type: MJD31CQ  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.