NSF080120L4A0 Datasheet - nexperia

N-channel SiC MOSFET

NSF080120L4A0 Features

* Excellent RDSon temperature stability

* Very low switching losses

* Fast reverse recovery

* Fast switching speed

* Temperature independent turn-off switching losses

* Very fast and robust intrinsic body diode

* Faster commutation and improved

NSF080120L4A0 General Description

The NSF080120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage i.

NSF080120L4A0 Datasheet (301.15 KB)