PBSS2515M Key Features
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High efficiency leading to reduced heat generation
- Reduced printed-circuit board requirements
- Part: PBSS2515M
- Manufacturer: Nexperia
- Size: 79.75 KB
Other PBSS2515M Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
NXP Semiconductors |
PBSS2515E | 0.5A NPN transistor |
Kexin Semiconductor |
PBSS2515E | NPN Transistor |
|
NXP Semiconductors |
PBSS2515F | low VCEsat NPN transistor |
|
NXP Semiconductors |
PBSS2515VPN | NPN/PNP Transistor |
|
NXP Semiconductors |
PBSS2515VS | NPN Transistor |
PBSS2515M Description
Low VCEsat NPN transistor in a SOT883 leadless ultra small plastic package. QUICK REFERENCE DATA SYMBOL PARAMETER VCEO IC ICM RCEsat collector-emitter voltage collector current (DC) peak collecto.