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PBSS2515VS - NPN Transistor

General Description

TR1; TR2 TR1; TR2 TR1; TR2 PARAMETER collector-emitter voltage peak collector current equivalent on-resistance MAX.

Key Features

  • 300 mW total power dissipation.
  • Very small 1.6 x 1.2 mm ultra thin package.
  • Excellent coplanarity due to straight leads.
  • Low collector-emitter saturation voltage.
  • High current capability.
  • Improved thermal behaviour due to flat lead.
  • Replaces two SC-75/SC-89 packaged low VCEsat transistors on same PCB area.
  • Reduces required PCB area.
  • Reduced pick and place costs.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS2515VS 15 V low VCEsat NPN double transistor Product specification Supersedes data of 2001 Sep 13 2001 Nov 07 Philips Semiconductors Product specification 15 V low VCEsat NPN double transistor FEATURES • 300 mW total power dissipation • Very small 1.6 x 1.2 mm ultra thin package • Excellent coplanarity due to straight leads • Low collector-emitter saturation voltage • High current capability • Improved thermal behaviour due to flat lead • Replaces two SC-75/SC-89 packaged low VCEsat transistors on same PCB area • Reduces required PCB area • Reduced pick and place costs.