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PBSS2515VS

PBSS2515VS is NPN Transistor manufactured by NXP Semiconductors.
PBSS2515VS datasheet preview

PBSS2515VS Datasheet

Part number PBSS2515VS
Download PBSS2515VS Datasheet (PDF)
File Size 78.60 KB
Manufacturer NXP Semiconductors
Description NPN Transistor
PBSS2515VS page 2 PBSS2515VS page 3

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PBSS2515VS Distributor

PBSS2515VS Description

TR2 PARAMETER collector-emitter voltage peak collector current equivalent on-resistance MAX. MARKING TYPE NUMBER PBSS2515VS MARKING CODE N9 Fig.1 Simplified outline (SOT666) and symbol. SYMBOL PARAMETER CONDITIONS − − − − − − Tamb ≤ 25 °C;.

PBSS2515VS Key Features

  • 300 mW total power dissipation
  • Very small 1.6 x 1.2 mm ultra thin package
  • Excellent coplanarity due to straight leads
  • Low collector-emitter saturation voltage
  • High current capability
  • Improved thermal behaviour due to flat lead
  • Replaces two SC-75/SC-89 packaged low VCEsat transistors on same PCB area
  • Reduces required PCB area
  • Reduced pick and place costs

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