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PBSS2515VS - NPN double transistor

General Description

NPN low VCEsat double transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package.

2.

Key Features

  • 300 mW total power dissipation.
  • Very small 1.6 x 1.2 mm ultra thin package.
  • Excellent coplanarity due to straight leads.
  • Low collector-emitter saturation voltage.
  • High current capability.
  • Improved thermal behavior due to flat lead.
  • Replaces two SC-75/SC-89 packaged low VCEsat transistors on same PCB area.
  • Reduces required PCB area.
  • Reduced pick and place costs 3.

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Full PDF Text Transcription (Reference)

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PBSS2515VS 15 V low VCEsat NPN double transistor 28 December 2022 Product data sheet 1. General description NPN low VCEsat double transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS3515VS 2. Features and benefits • 300 mW total power dissipation • Very small 1.6 x 1.2 mm ultra thin package • Excellent coplanarity due to straight leads • Low collector-emitter saturation voltage • High current capability • Improved thermal behavior due to flat lead • Replaces two SC-75/SC-89 packaged low VCEsat transistors on same PCB area • Reduces required PCB area • Reduced pick and place costs 3.