PBSS2515VS Description
NPN low VCEsat double transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package.
PBSS2515VS Key Features
- 300 mW total power dissipation
- Very small 1.6 x 1.2 mm ultra thin package
- Excellent coplanarity due to straight leads
- Low collector-emitter saturation voltage
- High current capability
- Improved thermal behavior due to flat lead
- Replaces two SC-75/SC-89 packaged low VCEsat transistors on same PCB area
- Reduces required PCB area
- Reduced pick and place costs