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PBSS2515M - NPN transistor

General Description

Low VCEsat NPN transistor in a SOT883 leadless ultra small plastic package.

PNP complement: PBSS3515M.

Key Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High efficiency leading to reduced heat generation.
  • Reduced printed-circuit board requirements.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BOTTOM VIEW M3D883 PBSS2515M 15 V, 0.5 A NPN low VCEsat (BISS) transistor Product data sheet Supersedes data of 2003 Jun 17 2003 Sep 15 NXP Semiconductors 15 V, 0.5 A NPN low VCEsat (BISS) transistor Product data sheet PBSS2515M FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency leading to reduced heat generation • Reduced printed-circuit board requirements. APPLICATIONS • Power management: – DC-DC converter – Supply line switching – Battery charger – LCD backlighting. • Peripheral driver: – Driver in low supply voltage applications (e.g. lamps and LEDs) – Inductive load drivers (e.g. relays, buzzers and motors).