PBSS2515M Description
Low VCEsat NPN transistor in a SOT883 leadless ultra small plastic package. QUICK REFERENCE DATA SYMBOL PARAMETER VCEO IC ICM RCEsat collector-emitter voltage collector current (DC) peak collecto.
PBSS2515M Key Features
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High efficiency leading to reduced heat generation
- Reduced printed-circuit board requirements