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PBSS303ND Datasheet 3A NPN transistor

Manufacturer: Nexperia

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General Description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS303PD.

1.2

Overview

PBSS303ND 60 V, 3 A NPN low VCEsat (BISS) transistor Rev.

02 — 14 December 2007 Product data sheet 1.

Product profile 1.

Key Features

  • I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (hFE) at high IC I High efficiency due to less heat generation I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.

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