* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High efficiency due to less heat generation
* Smaller required Printed-Circuit Board (PCB) area than for conventio
PBSS304PZ Datasheet (170.02 KB)
PBSS304PZ
170.02 KB
Pnp transistor.
PBSS304PZ 60 V, 4.5 A PNP low VCEsat (BISS) transistor Rev. 02 8 December 2009 Product data sheet 1. Product profile 1.1 General descript.
📁 Related Datasheet
PBSS304PD PNP Transistor (NXP)
PBSS304PX PNP Transistor (nexperia)
PBSS304ND 3A NPN transistor (NXP)
PBSS304NX NPN low VCEsat Breakthrough In Small Signal (BISS) transistor (NXP Semiconductors)
PBSS304NX-Q 4.7A NPN low VCEsat transistor (nexperia)
PBSS304NZ 5.2A NPN transistor (NXP)
PBSS301ND 4A NPN transistor (NXP)
PBSS301NX 5.3A NPN transistor (nexperia)
PBSS301NZ 5.8A NPN transistor (nexperia)
PBSS301PD PNP Transistor (NXP)
