• Part: PBSS304PZ
  • Manufacturer: Nexperia
  • Size: 170.02 KB
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PBSS304PZ Key Features

  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • High efficiency due to less heat generation
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

Other PBSS304PZ Datasheets

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PBSS304PZ Description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.