Datasheet Summary
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60 V, 5.2 A NPN low VCEsat (BISS) transistor
Rev. 01
- 18 September 2006 Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP plement: PBSS304PZ.
1.2 Features
I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I I I I I High-voltage DC-to-DC conversion High-voltage MOSFET...
