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PBSS306NX - 100V 4.5A NPN low VCEsat transistor

General Description

NPN low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.

2.

Key Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High collector current gain (hFE) at high IC.
  • High efficiency due to less heat generation.
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 3.

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Datasheet Details

Part number PBSS306NX
Manufacturer Nexperia
File Size 299.67 KB
Description 100V 4.5A NPN low VCEsat transistor
Datasheet download datasheet PBSS306NX Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PBSS306NX 100 V, 4.5 A NPN low VCEsat transistor 30 September 2025 Product data sheet 1. General description NPN low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS306PX 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain (hFE) at high IC • High efficiency due to less heat generation • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 3. Applications • High-voltage DC-to-DC conversion • High-voltage MOSFET gate driving • High-voltage motor control • High-voltage power switches (e.g. motors, fans) • Automotive applications 4. Quick reference data Table 1.