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PBSS306NX Datasheet 4.5A NPN transistor

Manufacturer: NXP Semiconductors

General Description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS306PX.

1.2

Overview

www.DataSheet4U.com PBSS306NX 100 V, 4.5 A NPN low VCEsat (BISS) transistor Rev.

01 — 21 August 2006 Product data sheet 1.

Product profile 1.

Key Features

  • I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.