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PBSS306PZ - PNP transistor

Description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS306NZ.

Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High collector current gain (hFE) at high IC 1.3.

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Datasheet Details

Part number PBSS306PZ
Manufacturer nexperia
File Size 725.78 KB
Description PNP transistor
Datasheet download datasheet PBSS306PZ Datasheet
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PBSS306PZ 100 V, 4.1 A PNP low VCEsat (BISS) transistor Rev. 3 — 26 July 2011 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS306NZ. 1.2 Features and benefits  Low collector-emitter saturation voltage VCEsat  High collector current capability IC and ICM  High collector current gain (hFE) at high IC 1.3 Applications  High-voltage DC-to-DC conversion  High-voltage MOSFET gate driving  High-voltage motor control  High efficiency due to less heat generation  Smaller Printed-Circuit Board (PCB) area than for conventional transistors  AEC-Q101 qualified  High-voltage power switches (e.g.
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