Datasheet Summary
100 V, 4.1 A PNP low VCEsat (BISS) transistor
Rev. 3
- 26 July 2011
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.
NPN plement: PBSS306NZ.
1.2 Features and benefits
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain (hFE) at high IC
1.3 Applications
- High-voltage DC-to-DC conversion
- High-voltage MOSFET gate driving
- High-voltage motor control
- High efficiency due to less heat generation
- Smaller Printed-Circuit Board (PCB) area than for...
