Datasheet4U Logo Datasheet4U.com

PBSS306PZ - PNP Transistor

Description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS306NZ.

Features

  • I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.

📥 Download Datasheet

Datasheet preview – PBSS306PZ

Datasheet Details

Part number PBSS306PZ
Manufacturer NXP
File Size 725.78 KB
Description PNP Transistor
Datasheet download datasheet PBSS306PZ Datasheet
Additional preview pages of the PBSS306PZ datasheet.

📁 Similar Datasheet

Other Datasheets by NXP

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com PBSS306PZ 100 V, 4.1 A PNP low VCEsat (BISS) transistor Rev. 01 — 20 September 2006 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS306NZ. 1.2 Features I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications I I I I I High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e.g.
Published: |