Datasheet4U Logo Datasheet4U.com

PBSS306NZ - 5.1A NPN transistor

Description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS306PZ.

Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High collector current gain (hFE) at high IC.
  • High efficiency due to less heat generation.
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.

📥 Download Datasheet

Datasheet preview – PBSS306NZ

Datasheet Details

Part number PBSS306NZ
Manufacturer nexperia
File Size 171.54 KB
Description 5.1A NPN transistor
Datasheet download datasheet PBSS306NZ Datasheet
Additional preview pages of the PBSS306NZ datasheet.

📁 Similar Datasheet

Other Datasheets by nexperia

Full PDF Text Transcription

Click to expand full text
PBSS306NZ 100 V, 5.1 A NPN low VCEsat (BISS) transistor Rev. 02 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS306PZ. 1.2 Features „ Low collector-emitter saturation voltage VCEsat „ High collector current capability IC and ICM „ High collector current gain (hFE) at high IC „ High efficiency due to less heat generation „ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications „ High-voltage DC-to-DC conversion „ High-voltage MOSFET gate driving „ High-voltage motor control „ High-voltage power switches (e.g. motors, fans) „ Automotive applications 1.
Published: |