Datasheet4U Logo Datasheet4U.com

PBSS304NX Datasheet NPN Low Vcesat Breakthrough In Small Signal (biss) Transistor

Manufacturer: NXP Semiconductors

Overview: PBSS304NX 60 V, 4.7 A NPN low VCEsat (BISS) transistor Rev. 02 — 20 November 2009 Product data sheet 1. Product profile 1.

General Description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS304PX.

1.2

Key Features

  • Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.

PBSS304NX Distributor