Datasheet Summary
60 V, 4.7 A NPN low VCEsat (BISS) transistor
Rev. 02
- 20 November 2009 Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP plement: PBSS304PX.
1.2 Features
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- Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
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- High-voltage DC-to-DC conversion High-voltage MOSFET...
