• Part: PBSS304NX
  • Description: NPN low VCEsat Breakthrough In Small Signal (BISS) transistor
  • Category: Transistor
  • Manufacturer: NXP Semiconductors
  • Size: 252.51 KB
PBSS304NX Datasheet (PDF) Download
NXP Semiconductors
PBSS304NX

Description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS304PX.

Key Features

  • Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors