Datasheet Summary
60 V, 4.7 A NPN low VCEsat transistor
9 November 2023
Product data sheet
1. General description
NPN low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.
PNP plement: PBSS304PX-Q
2. Features and benefits
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain (hFE) at high IC
- High efficiency due to less heat generation
- Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
- Qualified according to AEC-Q101 and remended for use in automotive applications
3. Applications
- High-voltage DC-to-DC conversion
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