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PBSS304PX - PNP Transistor

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General Description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS304NX.

Overview

PBSS304PX 60 V, 4.2 A PNP low VCEsat (BISS) transistor Rev.

02 — 8 December 2009 Product data sheet 1.

Product profile 1.

Key Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High collector current gain (hFE) at high IC.
  • High efficiency due to less heat generation.
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.

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