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PBSS306NZ Datasheet 5.1A NPN transistor

Manufacturer: Nexperia

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General Description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS306PZ.

1.2

Overview

PBSS306NZ 100 V, 5.1 A NPN low VCEsat (BISS) transistor Rev.

02 — 11 December 2009 Product data sheet 1.

Product profile 1.

Key Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High collector current gain (hFE) at high IC.
  • High efficiency due to less heat generation.
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.

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