* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High efficiency due to less heat generation
* Smaller required Printed-Circuit Board (PCB) area than for conventio
PBSS306NZ Datasheet (171.54 KB)
PBSS306NZ
171.54 KB
5.1a npn transistor.
PBSS306NZ 100 V, 5.1 A NPN low VCEsat (BISS) transistor Rev. 02 11 December 2009 Product data sheet 1. Product profile 1.1 General desc.
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