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PBSS306PZ - PNP transistor

General Description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS306NZ.

Key Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High collector current gain (hFE) at high IC 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PBSS306PZ 100 V, 4.1 A PNP low VCEsat (BISS) transistor Rev. 3 — 26 July 2011 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS306NZ. 1.2 Features and benefits  Low collector-emitter saturation voltage VCEsat  High collector current capability IC and ICM  High collector current gain (hFE) at high IC 1.3 Applications  High-voltage DC-to-DC conversion  High-voltage MOSFET gate driving  High-voltage motor control  High efficiency due to less heat generation  Smaller Printed-Circuit Board (PCB) area than for conventional transistors  AEC-Q101 qualified  High-voltage power switches (e.g.