• Part: PBSS4120T
  • Manufacturer: Nexperia
  • Size: 58.65 KB
Download PBSS4120T Datasheet PDF
PBSS4120T datasheet preview
PBSS4120T page 2
Page 2
PBSS4120T page 3
Page 3

PBSS4120T Key Features

  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High efficiency leading to less heat generation
  • Reduced printed-circuit board requirements
  • Cost effective alternative to MOSFETs in specific

Related Nexperia Datasheets

Part Number Description
PBSS4112PAN 1A NPN/NPN low VCEsat (BISS) transistor
PBSS4112PANP 1A NPN/PNP low VCEsat (BISS) transistor
PBSS4130PAN 1A NPN/NPN low VCEsat (BISS) transistor
PBSS4130PANP 1A NPN/PNP low VCEsat (BISS) transistor
PBSS4130QA NPN transistor

PBSS4120T Description

NPN BISS transistor in a SOT23 plastic package providing ultra low VCEsat and RCEsat parameters. QUICK REFERENCE DATA SYMBOL PARAMETER VCEO IC ICM RCEsat collector-emitter voltage.