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PBSS4112PANP - 1A NPN/PNP low VCEsat (BISS) transistor

General Description

NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

NPN/NPN complement: PBSS4112PAN.

PNP/PNP complement: PBSS5112PAP.

Key Features

  • Very low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High collector current gain hFE at high IC.
  • Reduced Printed-Circuit Board (PCB) requirements.
  • High efficiency due to less heat generation.
  • AEC-Q101 qualified 1.3.

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Datasheet Details

Part number PBSS4112PANP
Manufacturer Nexperia
File Size 830.31 KB
Description 1A NPN/PNP low VCEsat (BISS) transistor
Datasheet download datasheet PBSS4112PANP Datasheet

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Full PDF Text Transcription (Reference)

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PBSS4112PANP 120 V, 1 A NPN/PNP low VCEsat (BISS) transistor 29 November 2012 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PBSS4112PAN. PNP/PNP complement: PBSS5112PAP. 1.2 Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • Reduced Printed-Circuit Board (PCB) requirements • High efficiency due to less heat generation • AEC-Q101 qualified 1.3 Applications • Load switch • Battery-driven devices • Power management • Charging circuits • Power switches (e.g. motors, fans) 1.