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PBSS4112PANP Datasheet NPN/npn Low Vcesat (biss) Transistor

Manufacturer: NXP Semiconductors

Overview: PBSS4112PANP 29 November 2012 120 V, 1 A NPN/PNP low VCEsat (BISS) transistor Product data sheet 1. Product profile 1.

General Description

NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

NPN/NPN complement: PBSS4112PAN.

PNP/PNP complement: PBSS5112PAP.

Key Features

  • Very low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High collector current gain hFE at high IC.
  • Reduced Printed-Circuit Board (PCB) requirements.
  • High efficiency due to less heat generation.
  • AEC-Q101 qualified 1.3.

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